RU1H36L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/32A, RDS (ON) =34mΩ(Typ.)@VGS=10V
• Super High Dense Cel...
RU1H36L
N-Channel Advanced Power
MOSFET
MOSFET
Features
100V/32A, RDS (ON) =34mΩ(Typ.)@VGS=10V
Super High Dense Cell Design
Ultra Low On-Resistance
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-252
Applications
DC-DC Converters Synchronous Rectifier
N-Channel
MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
②
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=100°C TC=25°C TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– OCT., 2012
Rating
100 ±20 175 -5...