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RU1H35S Datasheet

Part Number RU1H35S
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU1H35S DatasheetRU1H35S Datasheet (PDF)

RU1H35S N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-263 Applications •Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Ra.

  RU1H35S   RU1H35S






Part Number RU1H35R
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU1H35S DatasheetRU1H35R Datasheet (PDF)

RU1H35R N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-220 Applications •Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Ra.

  RU1H35S   RU1H35S







Part Number RU1H35Q
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU1H35S DatasheetRU1H35Q Datasheet (PDF)

RU1H35Q N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-247 Applications •Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Ra.

  RU1H35S   RU1H35S







Part Number RU1H35L
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU1H35S DatasheetRU1H35L Datasheet (PDF)

RU1H35L N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-252 Applications • High Speed Power Switching N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperat.

  RU1H35S   RU1H35S







Part Number RU1H35K
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU1H35S DatasheetRU1H35K Datasheet (PDF)

RU1H35K N-Channel Advanced Power MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • High Speed Power Switching GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Dio.

  RU1H35S   RU1H35S







N-Channel Advanced Power MOSFET

RU1H35S N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-263 Applications •Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. B– FEB., 2011 Rating 100 ±25 175 -55 to 175 40 ① 160 ② 40 27 111 56 1.35 Unit V.


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