RU1H100R

RU1H100R N-Channel Advanced Power MOSFET Features 100V/75A RDS (ON)=11mΩ(Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested Applications ·High Speed Power Switching ·Uninterruptible Power Supply Pin Description TO-220 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case Drain-Source Avalanche Ratings StoragEeAST③emperatAuvrealaRnacnhgeeEnergy ,Single Pulsed -55 to 150 Copyright© Ruichips Semiconductor Co., Ltd Rev.B –SEP., 2010 TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C R...