RT240PD

www.DataSheet4U.com Preliminary 10W Power Transistor Product Features High Output Power P1dB = 40dBm(Typ.)@2.14GHz High Efficiency High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz High Linearity Hermetically sealed package GaN HFET Description RT240PD Application Repeater RF Sub-Systems Base Station Converter IMT-2000 ISM MMDS Wi-Fi, Wi-max The RT240PD is designed for base stations and cell extenders as cellular and GSM, PCS, IMT-2000, ISM, MMDS, Wi-Fi, Wi-MAX frequency systems, GaN HFET is used and attached on a gold sub carrier. z Typical Specifications Parameter Frequency (MHz) Small Signal Gain (dB) VSWR (Input / Output) 1dB Compression Point (dBm) * * Specifications 900 17 1800 14 2140 13 2.0 : 1 40 33 29 33 29 +28V / 600mA 31 28 26 50 @ 27dBm/tone -25℃ ~ +70℃ 48 @ 27dBm/tone 39 2640 12 3500 10 CDMA Power (1FA) (dBm) CDMA Power (7FA) (dBm) Vdd / Ids (CDMA Only) ** ** ** WCDMA Power (1FA) (dBm) WCDMA Power (2FA) (dBm) WCDMA Power (4FA) (dBm) OIP3 (dBm) Operating Temp Range * IS-95 ( ±750kHz offset@-29dBc ACPR, ±1.98MHz offset@-39dBc ACPR ) ** Test Model 1ch/64DPCH ( ±5MHz offset@-45dBc ACLR, ±10MHz offset@-50dBc ACLR ) z z All specifications may change without notice. www.rfhic.com www.DataSheet4U.com Preliminary 10W Power Transistor z Application Circuit ( 900MHz ) Schematic RT240PD C10 C9 C8 C7 C6 + C5 Z5 Z6 C11 C12 C13 C14 C15 C16 + - R2 RF IN Z1 C1 Z2 Z3 C2 R1 Z4 RT240PD RF OUT Z7 Z8 C3 Z9 C4 Typical ...