RSX501LA-20

www.DataSheet4U.com RSX501LA-20 Diodes Schottky barrier diode RSX501LA-20 zApplications General rectification zFeatures 1) Small and Thin power mold type (PMDT) 2) High reliability. 3) Low IR zExternal dimensions (Unit : mm) zLand size figure (Unit : mm) 2.0 1.4 zStructure Silicon epitaxial planar ROHM : PMDＴ PMDＴ zStructure zTaping dimensions (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.1 　　　　　 0 0.25±0.05 1.75±0.1 1.4 5.5±0.05 12.0±0.2 φ1.55±0.1 　　　　　 0 2.7±0.1 4.0±0.1 1.25±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol Reverse voltage (repetitive peak) 25 VRM Reverse voltage (DC) VR 20 Average rectified forward current (*1) 5.0 Io Forward current surge peak （60Hz・1cyc） 70 IFSM Junction temperature 125 Tj Storage temperature -40 to +125 Tstg (*1) Alumina substrate at the time of assemble, Tc=90℃ max. zElectrical characteristic (Ta=25°C) 5.0±0.1 Unit V V A A ℃ ℃ Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.39 500 Unit V µA Conditions IF=3.0A VR=20V 5.0±0.1 4.4 1/3 RSX501LA-20 Diodes zElectrical characteristic curves 10 Ta=125℃ Ta=75℃ 1000000 Ta=125℃ 100000 REVERSE CURRENT:IR(uA) 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:IF(A) 1 Ta=25℃ 10000 1000 100 Ta=75℃ 0.1 Ta=-25℃ Ta=25℃ 100 0.01 Ta=-25℃ 10 1 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 0 5 10 15 20 25 30 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-...