RSS120N03

RSS120N03 Transistors Switching (30V, 12A) RSS120N03 zFeatures 1) Low on-resistance. www.DataSheet4U.com 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm) SOP8 5.0±0.2 (5) (8) 6.0±0.3 3.9±0.15 1.5±0.1 0.15 zStructure Silicon N-channel MOS FET 1.27 0.4±0.1 0.1 Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipatino Channel temperature Strage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD zEquivalent circuit Limits 30 20 ±12 ±48 1.6 6.4 2 150 −55 to +150 Unit V V A A A A W °C °C (8) (7) (6) (5) (8) (7) (6) (5) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg ∗1 ∗1 ∗2 (1) ∗2 ∗1 Max.1.75 zApplications Power switching, DC / DC converter. 0.5±0.1 (1) (4) 0.2±0.1 (1) (2) (3) (4) (1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. zThermal resistance (Ta=25°C) Parameter Channel to ambient ∗MOUNTED ON A CERAMIC BOARD Symbol Rth (ch-a) Limits 62.5 Unit °C / W ∗ 1/3 RSS120N03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol I...