RS8234

RSA6.1J4 Diodes ESD Protection diode RSA 6.1J4 zApplication ESD protection zExternal dimensions (Units : mm) 0.2 + − 0.1 1.6 + − 0.1 (3) 0.22 + − 0.05 (1) (2) 0.5 + − 0.05 1.2 + − 0.1 1.6 + − 0.1 zConstruction Silicon epitaxial planar 0.5 0.5 1.0 + − 0.1 0.2 + − 0.1 ROHM : EMD5 EMD5 zCircuit zAbsolute maximum ratings (Ta=25°C) Parameter Peak pulse power-1 (tp=10×1000µs) Peak pulse power-2 (tp=8×20µs) Junction temperature Storage temperature Symbol Ppk Ppk Limits 10 80 150 −55 to +150 Tj Tstg zElectrical characteristics (Ta=25°C) ∗ Rating of per diode. Parameter Zener voltage Reverse current Forward voltage Junction capacitance Symbol VZ IR VF Ct Min. 6.10 − − − Typ. − − − 35 Max. 7.20 1 1.0 − Unit V µA V pF IZ=1mA VR=3.0V IF=100mA VR=0V, f=1MHz Conditions ∗ Zener voltage (Vz) shall be measured at 40ms after loading current. ∗ Please pay attention to static electricity when handling. E61 (4) (5) zFeatures 1) Ultra small mold type. (EMD5) 2) High reliability. 0~0.1 0.13 + − 0.05 (Each lead has same dimensions) Unit W W ˚C ˚C 1/2 RSA6.1J4 Diodes zOthers Parameter Equipment composition Criterion IEC-1000-4-2 Charge discharge capacitance Discharge resistance Repeat by 10 times No erroneous operation Contact In air : 150pF : 330Ω : ±9kV : ±16kV zElectrical characteristic curves (Ta=25°C) CAPACITANCE BETWEEN TERMINALS : Ct (pF) 1 100n 100n 100 ZENER CURRENT : Iz (A) 10n 1n 100µ 10µ 1µ 100n 5 REVERSE CURRENT : IR (A) 10n 1n 10 100p 10p 5.5 6 6.5 7 ...