RQK0604IGDQA

RQK0604IGDQA Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A) Low drive current High speed switching VDSS ≥ 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “IG“. Preliminary Datasheet R07DS0308EJ0300 Rev.3.00 Jan 10, 2014 3 D 2 G S 1 1. Source 2. Gate 3. Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, Duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm) Ratings 60 ±12 2 8 2 0.8 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C R07DS0308EJ0300 Rev.3.00 Jan 10, 2014 Page 1 of 8 RQK0604IGDQA Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS +12 — — V IG = +100 μA, VDS = 0 Gate to source breakdown voltage V(BR)GSS –12 — — V IG = –100 μA, VDS = 0 Gate to source leak current IGSS — — +10 μA VGS = +10 V, VDS = 0 Gate to source leak current IGSS — — –10 μA VGS = –10 V, VDS = 0 Drain to source leak current IDSS — — 1 μA VDS = 60 V, VGS = 0 Gate to source cutof...