RN4612

www.DataSheet4U.com RN4612 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4612 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Includeing two devices in SM6 (super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process Unit in mm Equivalent Circuit and Bias Resister Values R1: 22kΩ (Q1, Q2 Common) Q1 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −5 −100 Unit V V V mA JEDEC EIAJ TOSHIBA Weight: 0.015g ― SC-74 2-3N1A Q2 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 5 100 Unit V V V mA 1 2001-06-05 RN4612 Q1, Q2 Common Maximum Ratings (Ta = 25°C) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol PC * Tj Tstg Rating 300 150 −55~150 Unit mW °C °C * Total rating Marking Equivalent Circuit (Top View) 2 2001-06-05 RN4612 Q1 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE VCE (sat) fT Cob Test Circuit ― ― ― ― ― ― Test Condition VCB =...