RMWB24001

RMWB24001 www.DataSheet4U.com June 2004 RMWB24001 24 GHz Buffer Amplifier MMIC General Description The RMWB24001 is a 3-stage GaAs MMIC amplifier designed as an 17 to 24 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWB24001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications. Features 4 mil Substrate Small-signal Gain 25dB (typ.) Saturated Power Out 17dBm (typ.) Voltage Detector Included to Monitor Pout Chip size 2.5mm x 1.5mm x 100µm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (Vd–Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 110 +11 -30 to +85 -55 to +125 148 Units V V V mA dBm °C °C °C/W ©2004 Fairchild Semiconductor Corporation RMWB24001 Rev. D RMWB24001 Electrical www.DataSheet4U.com Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Current Idq = 70mA Min 17 13 14 Typ -0.2 15 2.0 17 80 15 12 12 1.0 Max 24 18 19 Units GHz V dB dB dBm mA % dB dB V Parameter Frequency Range Gate Supply Voltage1 (Vg) Gain (Small Signal Pin = 10dBm) Gain Variation...