Data Sheet
4.5V Drive Nch MOSFET
RMW280N03
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
PSOP8
0.5 5.0 ...
Data Sheet
4.5V Drive Nch
MOSFET
RMW280N03
Structure Silicon N-channel
MOSFET Dimensions (Unit : mm)
PSOP8
0.5 5.0 6.0
(8)
(7)
(6)
(5)
Features 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 3) Low
voltage drive(4.5V drive).
0~0.1
0.5
1pin mark
(1) (2)
(3)
(4) 0.4
0.22 0.9
1.27
5.0
Application Switching
Packaging specifications Package Type Code Basic ordering unit (pieces) RMW280N03 Taping TB 2500
Inner circuit
(8) (7) (6) (5)
Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source
voltage Gate-source
voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 MOUNTED ON 40mm ×40mm Cu BOARD
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Limits 30 20 28 112 2.5 112 3.0 150 55 to 150
Unit V V A A A A W C C
(1) (2) (3) (4) (5) (6) (7) (8)
Source Source Source Gate Drain Drain Drain Drain
∗2
∗1
(1)
(2)
(3)
(4)
VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP *1 IS ISP PD Tch Tstg
*1 *2
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Thermal resistance Parameter Channel to Ambient
* MOUNTED ON 40mm ×40mm Cu BOARD
Symbol Rth (ch-a)*
Limits 41.7
Unit C / W
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2011.03 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
RMW280N03
Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate
voltage drain current Gate threshold
voltage Static drain-source on...