www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
RM4 - RM4Z
PRV : 100 - 400 Volts Io : 1.7 Ampere
FEAT...
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
RM4 - RM4Z
PRV : 100 - 400 Volts Io : 1.7 Ampere
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward
voltage drop * Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.21 grams
SILICON RECTIFIER DIODES
DO - 201AD
0.208 (5.30) 0.188 (4.80)
0.050 (1.28) 0.048 (1.22)
1.00 (25.4) MIN.
0.374 (9.50) 0.283 (7.20)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Reverse
Voltage
Maximum Peak Reverse Surge
Voltage
Maximum Average Forward Current
Maximum Peak Forward Surge Current Half-cycle Sine wave, 50 Hz, Single Shot
Maximum Forward
Voltage at IF = 3.0 A
Maximum Reverse Current
Ta = 25 °C
at VR = VRmax.
Ta = 150 °C
Junction Temperature Range
Storage Temperature Range
SYMBOL VRM VRSM IF(AV)
RM4Y
RM4Z
RM4
100 200 400
150 250 450
1.7 (3.0 A is with Heatsink)
IFSM
200
VF IR IR(H) TJ TSTG
0.95 10 50 - 40 to + 150 - 40 to + 150
UNIT V V A
A
V μA μA °C °C
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