ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at h...
ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at
RLT6505MG
TECHNICAL DATA
Visible Wavelength Laserdiode
Structure: AlGaInP, index guided, single transverse mode Lasing wavelength: 650 nm NOTE! Max. optical power: 5 mW LASERDIODE Package: 5.6 mm MUST BE COOLED! PIN CONNECTION:
1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode
Maximum Ratings (Tc=25°C) CHARACTERISTIC Optical Output Power LD Reverse
Voltage PD Reverse
Voltage Operation Case Temperature Storage Temperature
SYMBOL Po VR(LD) VR(PD) TC TSTG
RATING 5 2 30 -10 .. +40 -40 .. +85
UNIT mW V V °C °C
Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Optical Output Power Po kink free Threshold Current Ith cw Operation Current Iop Po = 5 mW Operating
Voltage Vop Po = 5 mW Lasing Wavelength lp Po = 5 mW Beam Divergence Po = 5 mW θ// Beam Divergence Po = 5 mW θ⊥ Astigmatism As Po =5mW, NA=0.4 Monitor Current Im Po = 5 mW, Vr=5V
MIN 20
TYP 30 45 2.2 650 8 31 11 10
5 25
MAX 5 40 70 2.7 655 11 37 200
UNIT mW mA mA V nm ° ° µm µA
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