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RKR0505BKH

Renesas Technology

Silicon Schottky Barrier Diode

www.DataSheet4U.com RKR0505BKH Silicon Schottky Barrier Diode for Rectifying REJ03G1494-0100 Rev.1.00 Jan 09, 2007 Fea...


Renesas Technology

RKR0505BKH

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www.DataSheet4U.com RKR0505BKH Silicon Schottky Barrier Diode for Rectifying REJ03G1494-0100 Rev.1.00 Jan 09, 2007 Features Low forward voltage drop and suitable for high efficiency rectifying. Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. RKR0505BKH Laser Mark S7 Package Name TURP Package Code PUSF0002ZC-A Pin Arrangement Cathode mark Mark 1 S7 2 1. Cathode 2. Anode Rev.1.00 Jan 19, 2007 page 1 of 5 RKR0505BKH Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Symbol VRRM VR 1 2 IO * * IFSM * Tj 3 Value 50 40 0.5 3 150 Unit V V A A °C °C Storage temperature Tstg −55 to +150 Notes: 1. See from Fig.6 with Glass epoxy board. 2. Ta = 41°C, With Glass epoxy board (board size: 50mm × 50 mm, Land size 6mm × 6 mm) Short form wave (θ180°C), VR = 25 V. 3. 10 ms sine wave 1 pulse. Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF Min Typ Max 0.6 20 40 20 — — Unit V µA pF °C/W Test Condition IF = 500 mA VR = 10 V VR = 30 V VR = 10 V, f = 1 MHz Ceramics board * 2 Glass epoxy board * 1 — — — — — — — — — — 100 200 IR1 IR2 C Rth(j-a) Notes: 1. Ceramics board 2.0 0.5 2.0 0.3 2.0 50h×50w×0.8t Unit: mm 1.0 2. Glass epoxy board 6.0 0.5 6.0 0.3 2.0 50h×50w×0.8t Unit: mm 1.0 3. TURP ...




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