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RKR0505BKH
Silicon Schottky Barrier Diode for Rectifying
REJ03G1494-0100 Rev.1.00 Jan 09, 2007
Fea...
www.DataSheet4U.com
RKR0505BKH
Silicon Schottky Barrier Diode for Rectifying
REJ03G1494-0100 Rev.1.00 Jan 09, 2007
Features
Low forward
voltage drop and suitable for high efficiency rectifying. Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. RKR0505BKH Laser Mark S7 Package Name TURP Package Code PUSF0002ZC-A
Pin Arrangement
Cathode mark Mark 1
S7
2 1. Cathode 2. Anode
Rev.1.00 Jan 19, 2007 page 1 of 5
RKR0505BKH
Absolute Maximum Ratings
(Ta = 25°C)
Item Repetitive peak reverse
voltage Reverse
voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Symbol VRRM VR 1 2 IO * * IFSM * Tj
3
Value 50 40 0.5 3 150
Unit V V A A °C °C
Storage temperature Tstg −55 to +150 Notes: 1. See from Fig.6 with Glass epoxy board. 2. Ta = 41°C, With Glass epoxy board (board size: 50mm × 50 mm, Land size 6mm × 6 mm) Short form wave (θ180°C), VR = 25 V. 3. 10 ms sine wave 1 pulse.
Electrical Characteristics
(Ta = 25°C)
Item Forward
voltage Reverse current Capacitance Thermal resistance Symbol VF Min Typ Max 0.6 20 40 20 — — Unit V µA pF °C/W Test Condition IF = 500 mA VR = 10 V VR = 30 V VR = 10 V, f = 1 MHz Ceramics board * 2 Glass epoxy board *
1
—
— — — — —
—
— — — 100 200
IR1 IR2 C
Rth(j-a)
Notes: 1. Ceramics board
2.0
0.5
2.0 0.3 2.0
50h×50w×0.8t
Unit: mm
1.0
2. Glass epoxy board
6.0
0.5
6.0 0.3 2.0
50h×50w×0.8t
Unit: mm
1.0
3. TURP ...