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RKP410KS

Renesas Technology

Composite Pin Diode

www.DataSheet4U.com RKP410KS Composite Pin Diode for Antenna Switching REJ03G1544-0200 Rev.2.00 Jun 08, 2007 Features ...


Renesas Technology

RKP410KS

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www.DataSheet4U.com RKP410KS Composite Pin Diode for Antenna Switching REJ03G1544-0200 Rev.2.00 Jun 08, 2007 Features An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz) Thin outline of diode array with Six different kind of elements (MFP12) is suitable for surface mount design. Ordering Information Part No. RKP410KS Laser Mark M4 Package Name MFP12 Package Code PUSF0012ZA-A Pin Arrangement 12 11 10 9 8 7 12 11 10 9 8 7 1 M4 2 3 4 5 6 1 2 3 4 5 6 RKP200KP Series RKP201KN Series REJ03G1544-0100 Rev.2.00 Jun 08, 2007 Page 1 of 5 RKP410KS Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: Per one device Symbol VR IF Pd * Tj Tstg Value 30 100 100 125 −55 to +125 Unit V mA mW °C °C Electrical Characteristics (RKP200KP Series) (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance 1 ESD-Capability * Symbol IR VF C rf — Min — — — — 100 Typ — — — — — Max 100 1.0 0.35 1.3 — Unit nA V pF Ω V Test Condition VR = 30 V IF = 10 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, RL = 0 Ω, Both forward and reverse direction 1 pulse. Electrical Characteristics (RKP201KN Series) (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance 1 ESD-Capability * Symbol IR VF C rf — Min — — — — 100 Typ — — — — — Max 100 0.9 0.35...




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