RK9410
Transistors
Switching (30V, 7A)
RK9410
zFeatures 1) Low Qg. 2) Low on-resistance. www.DataSheet4U.com 3) Exellent resistance to damage from static electricity. zExternal dimensions (Units : mm)
+0.1 0.4− 0.1
1.27
0.15 +0.1 1.5−
Max.1.75
+0.2 5.0−
(5)
(4)
(8)
zEquivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
ROHM : SOP8
(4)
(1) (2) (3) (4)
∗
(1) (2) (3)
∗Gate Protection Diode. ∗ A protection diode is included between the gate
and the source terminals to protect the diode agai.
Switching
RK9410
Transistors
Switching (30V, 7A)
RK9410
zFeatures 1) Low Qg. 2) Low on-resistance. www.DataSheet4U.com 3) Exellent resistance to damage from static electricity. zExternal dimensions (Units : mm)
+0.1 0.4− 0.1
1.27
0.15 +0.1 1.5−
Max.1.75
+0.2 5.0−
(5)
(4)
(8)
zEquivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
ROHM : SOP8
(4)
(1) (2) (3) (4)
∗
(1) (2) (3)
∗Gate Protection Diode. ∗ A protection diode is included between the gate
and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded.
(1) (2) (3) (4) (5) (6) (7) (8)
Source Source Source Gate Drain Drain Drain Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Reverse Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗ IDR IDRP∗ Is Isp∗ PD Tch Tstg Limits 30 ±20 7 28 7 28 1.3 5.2 2 150 −55∼+150 Unit V V A A A A A A W ˚C ˚C
Total Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature
∗
Pw≤10ms, Duty cycle≤1%
+0.1 0.2−
Each lead has same dimensions
zStructure Silicon N-channel MOS FET
+0.15 3.9− +0.3 6.0− +0.1 0.5−
(1)
RK9410
Transistors
zThermal resistance (Ta=25°C)
Parameter Channel to Ambient Symbol Rth(ch-A) Limits 62.5 Unit ˚C / W
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. − 30 − 1.0 − RDS (on) l Yfs l∗ Ciss Coss Crss td (on)∗ tr∗ td (off)∗.