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RJP60D0DPP-M0

Renesas Technology
Part Number RJP60D0DPP-M0
Manufacturer Renesas Technology
Description Silicon N-Channel IGBT
Published Aug 8, 2011
Datasheet PDF File RJP60D0DPP-M0 PDF File


RJP60D0DPP-M0
RJP60D0DPP-M0


Features
 Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ.(IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding R07DS0173EJ0100 Rev.1.00 ...




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