IGBT
Description
Preliminary Datasheet
RJH60F5BDPQ-A0
600V - 40A - IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 68 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V,...
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