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1) Low forward voltage 2) Low switching loss 3) High current overload capacity lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) f3.1±0.1 10.2±0.2 4.5±0.1 2.6±0.1 lStructure 3.95±0.1 28.56±0.2 9.05±0.1 6 15.05±0.1 16.0±0.1 3 R...

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