RFHA1020

www.DataSheet.co.kr RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features       Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Optimized Evaluation Board Layout for 50 Operation Integrated Matching Components for High Terminal Impedances 50V Operation Typical Performance:   RF IN VG Pin 1 (CUT) GND BASE RF OUT VD Pin 2 Functional Block Diagram    Output Pulsed Power: 280W Pulse Width: 100 s, Duty Cycle 10% Small Signal Gain: 15dB High Efficiency (55%) - 40°C to 85°C Operating Temperature Product Description The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single package. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. Applications    Radar Air Traffic Control and Surveillance General Purpo...