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RF6E045AJ Datasheet
Part Number
RF6E045AJ
Manufacturers
Rohm
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Description
Nch 30V 4.5A Middle Power MOSFET
Datasheet
RF6E045AJ Datasheet (PDF)
RF6E045AJ Nch 30V 4.5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 23.7mΩ ±4.5A 1W lFeatures 1) Low on - resistance. 2) High Power Package (TUMT6). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lOutline TUMT6 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TCR Marking CJ lAbsolute maximum ratings (T.
Nch 30V 4.5A Middle Power MOSFET
RF6E045AJ Nch 30V 4.5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 23.7mΩ ±4.5A 1W lFeatures 1) Low on - resistance. 2) High Power Package (TUMT6). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lOutline TUMT6 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TCR Marking CJ lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature VDSS ID ID,pulse*1 VGSS PD*2 Tj Tstg 30 ±4.5 ±18 ±12 1 150 -55 to +150 V A A V W ℃ ℃ www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150403 - Rev.002 RF6E045AJ lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*2 Values Min. Typ. Max. - - 125 Unit ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown voltage temperature coefficient ΔV(BR)DSS ID = 1mA ΔTj referenced to 25℃ Zero gate voltage drain current IDSS VDS = 30V, VGS =.
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