DatasheetsPDF.com

RF6E045AJ Datasheet

Part Number RF6E045AJ
Manufacturers Rohm
Logo Rohm
Description Nch 30V 4.5A Middle Power MOSFET
Datasheet RF6E045AJ DatasheetRF6E045AJ Datasheet (PDF)

RF6E045AJ   Nch 30V 4.5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 23.7mΩ ±4.5A 1W lFeatures 1) Low on - resistance. 2) High Power Package (TUMT6). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lOutline TUMT6        lInner circuit    Datasheet                     lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TCR Marking CJ lAbsolute maximum ratings (T.

  RF6E045AJ   RF6E045AJ






Nch 30V 4.5A Middle Power MOSFET

RF6E045AJ   Nch 30V 4.5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 23.7mΩ ±4.5A 1W lFeatures 1) Low on - resistance. 2) High Power Package (TUMT6). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lOutline TUMT6        lInner circuit    Datasheet                     lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TCR Marking CJ lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature VDSS ID ID,pulse*1 VGSS PD*2 Tj Tstg 30 ±4.5 ±18 ±12 1 150 -55 to +150 V A A V W ℃ ℃                                                                                                                                         www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150403 - Rev.002     RF6E045AJ            lThermal resistance Parameter Thermal resistance, junction - ambient                 Datasheet                      Symbol RthJA*2 Values Min. Typ. Max. - - 125 Unit ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown voltage temperature coefficient  ΔV(BR)DSS  ID = 1mA    ΔTj     referenced to 25℃ Zero gate voltage drain current IDSS VDS = 30V, VGS =.


2015-07-01 : KIA6206F    PTS120660V005    PTS120660V010    PTS120630V012    PTS120630V016    PTS120624V020    PTS120616V025    PTS120616V035    PTS12066V050    PTS120615V050   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)