Super Fast Recovery Diode
RF101LAM4S
Data Sheet
lSeries Standard Fast Recovery
lApplications General rectification
lDimensions (Unit : mm)
2.50±0.20
(1)
0.17±
0.10 0.05
lLand Size Figure (Unit : mm)
2.0
3.70±0.20 4.70±0.14
1.4 4.4
PMDTM
lFeatures 1) Low forward voltage 2) Low switching loss 3) High current overload capacity
(2)
1.50±0.20
0.95±0.10
ROHM : PMDTM JEDEC : SOD-128
: Manufacture Date
lConstruction Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
lStructure .
Super Fast Recovery Diode
Super Fast Recovery Diode
RF101LAM4S
Data Sheet
lSeries Standard Fast Recovery
lApplications General rectification
lDimensions (Unit : mm)
2.50±0.20
(1)
0.17±
0.10 0.05
lLand Size Figure (Unit : mm)
2.0
3.70±0.20 4.70±0.14
1.4 4.4
PMDTM
lFeatures 1) Low forward voltage 2) Low switching loss 3) High current overload capacity
(2)
1.50±0.20
0.95±0.10
ROHM : PMDTM JEDEC : SOD-128
: Manufacture Date
lConstruction Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
lStructure Cathode
Anode
lAbsolute Maximum Ratings (Tl= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Average forward rectified current
Io
Non-repetitive forward surge current IFSM
Junction temperature
Tj
Storage temperature
Tstg
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage Reverse current Reverse recovery time
VF IR trr
Thermal resistance
Rth(j-l)
Conditions
Limits Unit
Duty≦0.5
400 V
Direct reverse voltage
Gla.