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RDX060N60 Datasheet

Part Number RDX060N60
Manufacturers Rohm
Logo Rohm
Description 10V Drive Nch MOS FET
Datasheet RDX060N60 DatasheetRDX060N60 Datasheet (PDF)

www.DataSheet4U.com RDX060N60 Transistors 10V Drive Nch MOS FET RDX060N60 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 14.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (1)Gate 15.0 12.0 8.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Switching zPackaging specifications Package Type RDX060N60 Code Basic ordering unit (pieces) Bulk − 500 (2).

  RDX060N60   RDX060N60






10V Drive Nch MOS FET

www.DataSheet4U.com RDX060N60 Transistors 10V Drive Nch MOS FET RDX060N60 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 14.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (1)Gate 15.0 12.0 8.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Switching zPackaging specifications Package Type RDX060N60 Code Basic ordering unit (pieces) Bulk − 500 (2)Drain (3)Source zInner circuit ∗1 ∗2 (1) (2) (3) ∗1 GATE PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Drain (3) Source zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID ∗1 IDP ∗2 IS ISP ∗2 IAS ∗3 EAS ∗4 PD Tch Tstg Limits 600 ±30 ±6 ±24 6 24 6 150 40 150 −55 to +150 Unit V V A A A A A mJ W °C °C Avalanche current Avalanche energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Limited only by maximum temperature allowed ∗2 Pw 10µs, Duty cycle 1% ∗4 L = 7.25mH VDD=90V Rg=25Ω starting Tch=25°C ∗3 L = 7.25mH VDD=90V Rg=25Ω zThermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits Unit °C/W 3.125 1/2 RDX060N60 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS VGS (th) Gate thre.


2007-01-21 : 28F128L30    28F256L30    28F640L30    2MBI300UD-120    2N6251    2N7002S    2SA1284    3935    AAG    AM42DL6404G   


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