RDN150N20
Transistors
Switching (200V, 15A)
RDN150N20
!Features 1) Low on-resistance. www.DataSheet4U.com 2) Low input ...
RDN150N20
Transistors
Switching (200V, 15A)
RDN150N20
!Features 1) Low on-resistance. www.DataSheet4U.com 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. !External dimensions (Unit : mm)
TO-220FN
+0.3 10.0 − 0.1 0.3 4.5 + −0.1
3.2±0.2
2.8 −0.1
+0.2
0.4 15.0 + −0.2
12.0±0.2
!Application Switching
5.0±0.2 8.0±0.2
1.2
1.3
14.0±0.5
0.8
!Structure Silicon N-channel MOS FET
(1) Gate (2) Drain (3) Source
2.54±0.5
2.54±0.5 0.75 −0.05
+0.1
2.6±0.5
(1) (2) (3)
!Absolute maximum ratings (Ta=25°C)
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current Reverse Drain Current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IDR IDRP ∗1 IAS ∗2 EAS ∗2 PD Tch Tstg Limits 200 ±30 15 45 15 45 15 210 40 150 −55 to +150 Unit V V A A A A A mJ W °C °C
!Equivalent circuit
Drain
Gate
Avalanche Current Avalanche Energy Total Power Dissipation (TC=25°C) Channel Temperature Storage Temperature
∗Gate Protection Diode
Source
∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed
voltages are exceeded.
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RDN150N20
Transistors
!Electrical characteristics (Ta=25°C)
Parameter Gate-Source Leakage Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Threshold
Voltage Static Drain-Source On-State Res...