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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HVF1
D...
www.DataSheet4U.com
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HVF1
DRAWING
22.0+/-0.3 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1
RoHS Compliance, DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power
amplifiers applications.
Silicon
MOSFET Power Transistor,175MHz,30W
OUTLINE
High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ.
2 3
R1.6
14.0+/-0.4
6.6+/-0.3
FEATURES
1
APPLICATION
For output stage of high power
amplifiers in VHF band Mobile radio sets.
2.3+/-0.3
2.8+/-0.3 0.10
3.0+/-0.4
5.1+/-0.5
PIN 1.Drain 2.Source 3.Gate UNIT:mm
RoHS COMPLIANT
RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source
voltage Gate to source
voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 75 2.5 7 175 -40 to +175 2.0 UNIT V V W
W A °C °C °C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL IDSS IGSS VTH Pout ηD PARAMETER
(Tc=25°C, UNLESS OTHERWISE NOTED)
CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz ,VDD=12.5V Pin=1.0W, Idq=0.5A VDD=15.2V,Po=30W(PinControl) f=175MHz,Idq=0.5A,Zg=50Ω Loa...