< Silicon RF Power MOS FET (Discrete) >
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
DESCRIPTION...
< Silicon RF Power MOS FET (Discrete) >
RD16HHF1
RoHS Compliance, Silicon
MOSFET Power Transistor 30MHz,16W
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power
amplifiers applications.
FEATURES
High power gain: Pout>16W, Gp>16dB @Vds=12.5V,f=30MHz Integrated gate protection diode
12.3+/-0.6 3.2+/-0.4
4.8MAX 9+/-0.4
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.2+/-0.4 0.8+0.10/-0.15
1.3+/-0.4
12.3MIN
APPLICATION
For output stage of high power
amplifiers in HF band mobile radio sets.
123
2.5 2.5
5deg
0.5+0.10/-0.15
3.1+/-0.6 4.5 +/- 0.5
RoHS COMPLIANT
RD16HHF1-501 is a RoHS compliant product.
PINS
1: GAT E
9.5MAX
2:SOURCE
note: 3:DRAIN
Torelance of no designation means typical value.
Dimension in mm.
RoHS compliance is indicate by the letter “G” after the lot
marking.
This product include the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melt...
