P-Channel Enhancement Mode Field Effect Transistor
Description
RCR1525SI
P-Channel Enhancement Mode Field Effect Transistor
z Features VDS (V) = -30 V ID = -3.5 A RDS(ON) = 75mΩ @VGS = -10V RDS(ON) = 90mΩ @VGS = -4.5V High density cell design for low RDS(ON).
z General Description
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimi...
