RCR1515SM
N-Channel Enhancement Mode Field Effect Transistor
z Features 20V/5A RDS(ON) = 28mΩ @ VGS = 4.5V RDS(ON) = 3...
RCR1515SM
N-Channel Enhancement Mode Field Effect Transistor
z Features 20V/5A RDS(ON) = 28mΩ @ VGS = 4.5V RDS(ON) = 38mΩ @ VGS = 2.5V Low VGS(TH) SOT89 Package
z Pin Configurations
z General Description The RCR1515SM uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.RCR1515SM are electrically identical.-RoHS Compliant
z Package Information
z Absolute Maximum Ratings @TA=25℃ unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDSS
Gate-Source
Voltage
VGSS
Drain Current (Continuous)
TA=25°C TA=70°C
ID
Drain Current (Pulse)
IDM
Power Dissipation
TA=25°C TA=70°C
PD
Ratings 20
±12 5 4 20 1 0.7
Unit V V A A W
1/5
RCR1515SM
Operating Temperature/ Storage Temperature
TJ//TSTG
-55~150
℃
z Electrical Characteristics @TA=25℃ unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ Max Unit...
