RBS2LAM40B
Schottky Barrier Diode
●Outline
VR 20 V
Io 2 A
IFSM 50 A
●...
RBS2LAM40B
Schottky Barrier Diode
●Outline
VR 20 V
Io 2 A
IFSM 50 A
●Features High reliability Small power mold type Super low VF
●Inner Circuit
Data sheet
●Application
●Packaging Specifications
General rectification
Packing
Embossed Tape
Reel Size(mm)
180
●Structure
Taping Width(mm) Quantity(pcs)
12 3000
Silicon epitaxial planar
Taping Code
TR
Marking
B7
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse
voltage Reverse
voltage
Average rectified forward current
VRM VR
Io
Duty≦0.5
Reverse direct
voltage
Glass epoxy mounted、 60Hz half sin waveform、resistive load、
Tc=100℃ Max.
40 20
2
V V
A
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃
50
A
Junction temperature(1)
Tj -
Storage temperature
Tstg -
Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dPd/dTj<1/Rth(j-a).
125 -55 ~ 125
℃ ℃
●Characteristics (Tj=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward
voltage Reverse current
VF
IF=2A
- 0.37 0.41 V
IR
VR=20V
- 230 500 μA
Attention
www.rohm.com © 2016- ROHMCo., Ltd.All rights reserved.
1/5
2019/05/28_Rev.002
RBS2LAM40B
●Characteristic Curves
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