RBR40NS60A
Schottky Barrier Diode
●Outline
VR 60 V
Io 40 A
IFSM 100 A
...
RBR40NS60A
Schottky Barrier Diode
●Outline
VR 60 V
Io 40 A
IFSM 100 A
●Features High reliability Power mold type Cathode common dual type Low VF
●Inner Circuit
Data sheet
●Application
●Packaging Specifications
Switching power supply
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
●Structure
Quantity(pcs)
1000
Silicon epitaxial planar
Taping Code
TL
Marking
BR40NS60A
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse
voltage
VRM
Duty≦0.5
60 V
Reverse
voltage Average rectified forward current Peak forward surge current Junction temperature(1)
VR Reverse direct
voltage
60 V
Io IFSM
60Hz half sin waveform,resistive load, Io/2 per diode,Tc=85℃Max.
60Hz half sin waveform, non-repetitive,per diode,Ta=25℃
40 100
A A
Tj -
150 ℃
Storage temperature
Tstg -
Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dPd/dTj<1/RθJA.
Attention
-55 ~ 150
℃
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1/6 2019/05/28_Rev.003
RBR40NS60A
Data sheet
●Electrical Characteristics Parameter
Forward
voltage(1) Reverse current(1)
Note (1) Value per diode
(Tj=25ºC unless otherwise specified)
Symbol
Conditions
VF IF=20A
IR VR=60V
Min. Typ. Max. Unit - - 0.60 V - - 800 μA
●Thermal Characteristics ...