Schottky Barrier Diode
RBR20NS60A
Data Sheet
lApplication Switching power supply
lDimensions (Unit : mm)
(2)
lLand size figure (Unit : mm)
11
3.5 2.5 8.5
16
lFeatures 1) Cathode common dual type 2) High reliability 3) Low VF
BR20NS 60A
1
(1) (3)
9.9 2.5
2.54
TO-263S
lStructure
ROHM : TO-263S JEITA : SC-83 1 : Manufacture date
2.54 (2) Cathode
lConstruction Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
VRM VR Io IFSM
Operating Junction Temperature Storage Temperature
Tj Tstg
Conditions
Duty≦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load, IO/2 per diode, Tc=115°C Max.
60Hz half sin wave, Non-repetitive at Ta=25°C, 1cycle, per diode
-
-
Limits Unit 60 V 60 V 20 A 100 A 150 °C
-55 to +150 °C
lElectrical and Thermal Characteristics (Tj =.