DatasheetsPDF.com

RBR10NS30A Datasheet

Part Number RBR10NS30A
Manufacturers ROHM
Logo ROHM
Description Schottky Barrier Diode
Datasheet RBR10NS30A DatasheetRBR10NS30A Datasheet (PDF)

RBR10NS30A Schottky Barrier Diode                                                   ●Outline VR 30 V Io 10 A IFSM 50 A ●Features High reliability Power mold type Cathode common dual type Low VF ●Inner Circuit Data sheet                         ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking BR10NS30A ●Absolute Maximum Ratings.

  RBR10NS30A   RBR10NS30A






Schottky Barrier Diode

RBR10NS30A Schottky Barrier Diode                                                   ●Outline VR 30 V Io 10 A IFSM 50 A ●Features High reliability Power mold type Cathode common dual type Low VF ●Inner Circuit Data sheet                         ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking BR10NS30A ●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 30 V Reverse voltage Average rectified forward current Peak forward surge current Junction temperature(1) VR Reverse direct voltage 30 V Io IFSM 60Hz half sin waveform,resistive load, Io/2 per diode,Tc=135℃Max. 60Hz half sin waveform, non-repetitive,per diode,Ta=25℃ 10 50 A A Tj - 150 ℃ Storage temperature Tstg - Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dPd/dTj<1/RθJA. Attention -55 ~ 150 ℃ www.rohm.com © 2018- ROHMCo., Ltd.All rights reserved.                1/6   2019/05/27_Rev.003 RBR10NS30A                                     Data sheet ●Electrical Characteristics Parameter Forward voltage(1) Reverse current(1) Note (1) Value per diode (Tj=25ºC unless otherwise specified) Symbol Conditions VF IF=5A IR VR=30V Min. Typ. Max. Unit - - 0.55 V - - 100 μA ●Thermal Characteristics     .


2017-04-03 : VLMK33S1T1-GS08    VLMK33S1T1-GS18    VLME31R1S2-GS08    VLME31R1S2-GS18    VLME31S1T1-GS08    VLME31S1T1-GS18    VLME3100    VLME3101    VLME3105    VLMF3100   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)