Schottky Barrier Diode
RBQ30T45ANZ
lApplication General rectification
lFeatures 1) Cathode common type. 2) Low IR 3) High reliability
lConstruction Silicon epitaxial planar
lDimensions (Unit : mm)
10.0±0.3 0.1
4.5±0.3 0.1
2.8±0.2 0.1
5.0±0.2 8.0±0.2 12.0±0.2
13.5MIN 15.0±0.4 0.2
8.0
1
1.2
1.3 0.8
(1) (2) (3)
ROHM TO220FN 1 Manufacture Date
0.7±0.1 0.05
2.6±0.5
lPackage Dimensions (Unit : mm)
7 540
Anode Cathode Anode
Data Sheet lStructure
34.5
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Reverse voltage (repetitive) Reverse voltage (DC)
VRM VR
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz・1cyc) Junction temperature
IFSM Tj
Storage temperature
Tstg
(*1) Rating of per diode : Io/2
Limits 45 45 30 100 150
-40 to +150
Unit V V A A °C °C
lElectrical characteristics (Tj = 25°C) Parameter
Forward voltage Reverse current
Symbol Min. VF IR -
Typ. Max. - 0.65 - 450
Unit Conditions .