Schottky Barrier Diode
RBQ10T45ANZ
Applications Switching power supply
Dimensions (Unit : mm)
Features 1) Power mo...
Schottky Barrier Diode
RBQ10T45ANZ
Applications Switching power supply
Dimensions (Unit : mm)
Features 1) Power mold type (TO-220FN) 2) Cathode common dual type 3) High reliability 4) Low IR
φ3.2±0.2
①
Datasheet Structure
(1) (2) (3) Anode Cathode Anode
Construction Silicon epitaxial planar type
ROHM : : TO-220FN ① : Manufacture date
Packing Dimensions (Unit : mm)
7 540
34.5
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive peak reverse
voltage Reverse
voltage Average forward rectified current
Non-repetitive forward current surge peak
Operating junction temperature Storage temperature
VRM VR Io IFSM Tj Tstg
Conditions
Duty≦0.5
Direct Reverse
Voltage
60Hz half sin wave, resistive load, IO/2 per diode, Tc= 130°C Max.
60Hz half sin wave, Non-repetitive at Ta=25°C, 1cycle, per diode
-
-
Limits Unit 45 V 45 V 10 A 50 A 150 °C
55 to 150 °C
Electrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Forward
voltage Reverse current Thermal resistance
VF IR1 IR2 Rth(j-c)
IF=5A VR=40V VR=45V Junction to case
Min. Typ. Max. Unit - 0.55 0.65 V - 5 40 μA - 10 70 μA - - 2 °C/W
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1/4
2017.08 - Rev.B
RBQ10T45ANZ Electrical Characteristic Curves
Datasheet
FORWARD CURRENT : IF(A)
100
Tj = 150°C 10
Tj = 125°C
1 Tj = 75°C
Tj = 25°C 0.1
Tj = 25°C
0.01 0
200 400 600 800 1000 1200
FORWARD
VOLTAGE : VF(mV) VF-IF CHARACTERISTICS
REVERSE CURRENT : IR(μA)
100000 10000...