RB557W

www.DataSheet4U.com RB557W Diodes Schottky barrier diode RB557W zApplications General rectification zDimensions (Unit : mm) zLand size figure (Unit : mm) 1.6±0.2 0.5 0.5 0.15±0.05 zFeatures 1) Ultra small mold type. (EMD3) 2) Low VF 3) High reliability 0.2±0.1 　　-0.05 (2) 0.3±0.1 　　　 0.05 (3) 0.7 1.6±0.2 0.8±0.1 0～0.1 0.1Min 0.7 0.7 (1) 0.55±0.1 0.7±0.1 0.6 EMD3 0.6 zConstruction Silicon epitaxial planar 0.5 0.5 1.0±0.1 zStructure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) zTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 　　　　　 0 1.75±0.1 0.3±0.1 3.5±0.05 1.8±0.2 5.5±0.2 1.8±0.1 φ0.5±0.1 0～0.1 8.0±0.2 0.9±0.2 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 100 500 125 -40 to +125 Unit V mA mA ℃ ℃ (*1) Rating of per diode zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. - Typ. - Max. 0.35 0.49 10 Unit V V µA Conditions IF=10mA IF=100mA VR=10V 1.3 1/3 RB557W Diodes zElectrical characteristic curves 1000 FORWARD CURRENT:IF(mA) 100 10 1 0.1 0.01 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS Ta=125℃ REVERSE CURRENT:IR(uA) Ta=75℃ 10000 1000 Ta=75℃ 100 10 1 Ta=-25℃ 0.1 0.01 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=25℃ 100 Ta=125℃ CAPACIT...