RB501SM-30

Schottky Barrier Diode RB501SM-30 Data Sheet lApplication General rectification lDimensions (Unit : mm) 0.8±0.05 0.12±0.05 (1) lLand Size Figure (Unit : mm) 0.8 1.2±0.05 1.6±0.1 0.6 1.7 lFeatures 1) Ultra small mold type (EMD2) 2) High reliability 3) Super low VF lConstruction Silicon epitaxial planar type (2) 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC : SOD-523 JEITA : SC-79 : Year, week and factory lTaping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.5±0.05 f1.50.05 EMD2 lStructure (1) Cathode (2) Anode 0.2±0.05 1.75±0.1 0.6 3.5±0.05 8.0±0.15 1.26±0.05 0 2.45±0.1 1.3±0.06 0 0.95±0.06 0 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Emポpケtyッpトocket 4.0±0.1 Conditions 2.0±0.05 fφ0.05.5 0.2 0.76±0.05 Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 30 V Reverse voltage VR Direct reverse voltage Average forward rectified current Non-repetitive forward current surge peak Io IFSM Glass epoxy board mounted, 60Hz half sin wave, resistive load 60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle Operating junction temperature Tj - 30 100 1000 125 V mA mA °C Storage temperature Tstg - -55 to +125 °C lElectrical Characteristics (Tj= 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=10mA - - 0.35 V Reverse current IR VR=10V - - 10 mA www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/5 2015.01 - Rev.A RB501SM-30 lElectrical Characteristic Curves Data Sheet FORWARD CURRENT : IF(mA)...