RB215T-40

RB215T-40 Diodes Schottky barrier diode RB215T-40 zApplications Switching power supply zExternal dimensions (Unit : mm) 4.5±0.3 　　　 0.1 zStructure ① 1.3 0.8 (1) (2) (3) 13.5MIN zConstruction Silicon epitaxial planar 1.2 5.0±0.2 8.0±0.2 12.0±0.2 zFeatures 1) Cathode common dual type. (TO-220) 2) Low IR 3) High reliability 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 15.0±0.4 　 0.2 8.0 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date zAbsolute maximum ratings (Ta=25°C) Parameter Forward voltage (repetitive peak) Forward voltage (DC) Average rectified forward current（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature (*1)Tc=100℃max Per chip : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 20 100 150 -40 to +150 Unit V V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR θjc Min. Typ. Max. 0.55 500 1.75 Unit V µA ℃/W Conditions IF=10A VR=40V junction to case Rev.C 1/3 RB215T-40 Diodes zElectrical characteristic curves 10 Ta=150℃ 1000000 Ta=150℃ Ta=125℃ 10000 f=1MHz REVERSE CURRENT:IR(uA) 100000 10000 1000 100 10 1 0.1 Ta=25℃ Ta=-25℃ Ta=75℃ FORWARD CURRENT:IF(A) Ta=125℃ 1 Ta=75℃ Ta=25℃ 0.1 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 100 10 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 35 40 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 500 1000...