Schottky Barrier Diode
RB168L-40
lApplication General rectification
lDimensions (Unit : mm)
2.6±0.15
Data Sheet
lLand...
Schottky Barrier Diode
RB168L-40
lApplication General rectification
lDimensions (Unit : mm)
2.6±0.15
Data Sheet
lLand Size Figure (Unit : mm)
2.0
4.5±0.2 1.2±0.3
5.0±0.3
2.0 4.2
lFeatures 1) Small power mold type
(PMDS) 2) High reliability 3) Super low IR
lConstruction Silicon epitaxial planar type
12
0.1±0.02
1.5±0.2
2.0±0.2
ROHM : PMDS JEDEC : SOD-106
1 2 : Manufacture Date
lTaping Dimensions (Unit : mm)
2.0±0.05 4.0±0.1
PMDS
lStructure
φf11..555±00..0055
Cathode
Anode
0.3
5.3±0.1 0.05
9.5±0.1 5.5±0.05 1.75±0.1
12±0.2
2.9±0.1
4.0±0.1
φf11..555
2.8MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse
voltage
VRM
Duty≦0.5
40 V
Reverse
voltage
VR Direct reverse
voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io IFSM
Glass epoxy board mounted, 60Hz half sin wave, resistive load, Tc=125ºC Max. 60Hz half sin wave, one cycle, non-repetitive at Ta=25ºC
Operating junction temperature
Tj
-
40 1 30 150
V A A °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward
voltage Reverse current
VF IF=1.0A - - 0.65 V
IR
VR=40V
- - 0.55 mA
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1/5
2015.01 - Rev.A
RB168L-40 lElectrical Characteristic Curves
Data Sheet
FORWARD CURRENT : IF(A)
10
Tj = 150°C Tj = 125°C 1
Tj = 75°C
0.1 Tj = 25°C
0.01
Tj = -25°C
0.001 0 ...
