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RA07H0608M Datasheet

Part Number RA07H0608M
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description MITSUBISHI RF MOSFET MODULE
Datasheet RA07H0608M DatasheetRA07H0608M Datasheet (PDF)

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H0608M BLOCK DIAGRAM 2 3 68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/MOBILE RADIO DESCRIPTION The RA07H0608M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and th.

  RA07H0608M   RA07H0608M






MITSUBISHI RF MOSFET MODULE

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H0608M BLOCK DIAGRAM 2 3 68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/MOBILE RADIO DESCRIPTION The RA07H0608M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V) • Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW • ηT>38% @ Pout=7W (V GG control), VDD=12.5V, Pin=30mW • Broadband Frequency Range: 68-88MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 30 x 10 x 5.4 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1.


2006-01-06 : 2SK0065    2SK65    2SK0665    2SK665    2SK0664    2SK664    2SK0663    2SK663    2SK0662    2SK662   


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