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QSE243

Fairchild Semiconductor

LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR

LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE243 PACKAGE DIMENSIONS 0.060 (1.50) 0.174 (4.44) R 0....


Fairchild Semiconductor

QSE243

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LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE243 PACKAGE DIMENSIONS 0.060 (1.50) 0.174 (4.44) R 0.030 (0.76) 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN @; ; @ SCHEMATIC Collector Emitter EMITTER 0.060 (1.52) 0.020 (0.51) SQ. (2X) 0.100 (2.54) NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. DESCRIPTION The QSE243 is a silicon phototransistor with low light level rejection, encapsulated in a medium angle, thin clear plastic sidelooker package. FEATURES NPN Silicon Phototransistor with internal base-emitter resistance Package Type: Sidelooker Medium Reception Angle, 50° Clear Plastic Package Matching Emitter: QEE213  2001 Fairchild Semiconductor Corporation DS300288 9/20/01 1 OF 3 www.fairchildsemi.com LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE243 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to + 100 -40 to + 100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW ELECTRICAL / OPTICAL CHARACTERISTICS Parameter Peak Sensitivity Reception Angle Collector Emitter Dark Current Collector Emitter Breakdown Saturation ...




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