QSD724

PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD722 PACKAGE DIMENSIONS 0.190 (4.83) 0.178 (4.52) QSD723 QSD724 45° REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER 0.050 (1.27) 0.100 (2.54) NOM 0.215 (5.46) NOM 0.020 (0.51) SQ 2PLCS COLLECTOR SCHEMATIC COLLECTOR 45° 0.020 (0.51) RADIUS NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. EMITTER DESCRIPTION The QSD722/723/724 is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. FEATURES NPN Silicon Phototransistor Package Type: Plastic TO-18 Matched Emitter: QED523 Narrow Reception Angle, 40° Daylight Filter Package material and color: black epoxy High Sensitivity  2001 Fairchild Semiconductor Corporation DS300363 7/18/01 1 OF 4 www.fairchildsemi.com PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD722 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW QSD723 QSD724 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as c...