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QRE1113.GR

Fairchild Semiconductor

REFLECTIVE OBJECT SENSOR

REFLECTIVE OBJECT SENSOR QRE1113.GR PACKAGE DIMENSIONS 0.114 (2.90) 0.099 (2.50) 4 3 0.024 (0.60) 0.016 (0.40) 0.079 (...


Fairchild Semiconductor

QRE1113.GR

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REFLECTIVE OBJECT SENSOR QRE1113.GR PACKAGE DIMENSIONS 0.114 (2.90) 0.099 (2.50) 4 3 0.024 (0.60) 0.016 (0.40) 0.079 (2.0) 0.063 (1.60) 0.130 (3.30) 0.122 (3.10) 1 2 30° 0.063 (1.60) 0.055 (1.40) 0.024 (0.61) NOM (4X) 0.193 (4.90) 0.177 (4.50) 0.043 (1.10) 0.035 (0.90) SCHEMATIC PIN 1 ANODE PIN 2 CATHODE PIN 3 COLLECTOR PIN 4 EMITTER NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions 1 2 3 4 FEATURES Phototransistor output Tape and reel packaging No contact surface sensing Miniature package Lead form style: Gull Wing © 2002 Fairchild Semiconductor Corporation Page 1 of 5 12/9/02 REFLECTIVE OBJECT SENSOR QRE1113.GR ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature EMITTER Continuous Forward Current Reverse Voltage Peak Forward Current(5) Power Dissipation(1) SENSOR Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation(1) VCEO VECO IC PD 30 5 20 50 V V mA mW IF VR IFP PD 50 5 1 75 mA V mA mW (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Symbol TOPR TSTG TSOL-I TSOL-F Rating -25 to +85 -30 to +100 240 for 5 sec 260 for 10 sec Units °C °C °C °C ELECTRICAL / OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER INPUT DIODE Forward Voltage Reverse Leakage Current Peak Emission Wavelength OUTPUT TRANSISTOR Collector-Emitter Dark Curren...




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