QRE00034

REFLECTIVE OBJECT SENSOR QRE00034 PACKAGE DIMENSIONS E 0.236 (6.00) + + D E + D + 0.492 (12.50) 2 1 0.331 (8.40) 0.197 (5.00) 3 4 0.314 (8.00) SCHEMATIC 0.118 (3.00) 0.018 (0.46) SQ. (4X) 1 2 4 3 0.100 (2.54) 0.362 (9.20) NOTES: 1. Dimensions for all drawings are in inches. 2. Tolerance of ± .010 on all non-nominal dimensions unless otherwise specified. DESCRIPTION The QRE00034 reflective object sensor consists of an infrared emitting diode and an NPN phototransistor mounted side by side on a converging optical axis in a black housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes in its field of view. FEATURES Phototransistor output No contact surface sensing Daylight filter on the sensor Emitter = 940 nm  2001 Fairchild Semiconductor Corporation DS300254 9/21/01 1 OF 6 www.fairchildsemi.com REFLECTIVE OBJECT SENSOR QRE00034 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature EMITTER Continuous Forward Current Reverse Voltage Peak Forward Current Power Dissipation(1) SENSOR Collector-Emitter Voltage Power Dissipation(1) (Flow)(2,3) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR IFP PD VCEO PD Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 50 5 1 100 30 100 Units °C °C °C °C mA V A mW V mW ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA = 25°C) S...