MITSUBISHI TRANSISTOR MODULES
QM75TF-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
QM75TF-HB
• • • • •
IC Collector cur...
MITSUBISHI TRANSISTOR MODULES
QM75TF-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
QM75TF-HB
IC Collector current .......................... 75A VCEX Collector-emitter
voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
102±0.3 6 14 6 14 6 17 7–M4 BuP
BuP EuP BvP EvP BwP EwP
4–φ5.5 P
BvP EvP BvN EvN U V
BwP EwP BwN EwN
74±0.25
91±0.3
P
BuN EuN
BvN EvN
BwNEwN
30 16.5
P
P
EuP BuN EuN
30
U N
V
W
43
N
12
N N W
24.5
22 20 20 22
2
6.5
17
80±0.25
11
27
Tab#110, t=0.5
8.1
30+1.5 – 0.2
29.5
LABEL
7
Note: All Transistor Units are 3-Stage Darlingtons.
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75TF-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter
voltage Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation
voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 6...