QM75E2Y-H

MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE QM75E2Y/E3Y-H IC Collector current .......................... 75A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC chopper, DC motor controllers, Inverters OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 (7) 20 10.5 13 10.5 (E2Y) (7) 20 27 φ6.5 E1 D2 D1 A1 C1 80 34 E1 B1 12 B1 M5 Tab#110, t=0.5 6.5 E1 (E3Y) D2 D1 C1 E1 K1 31 LABEL (8) 22.5 E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) (Transistor part including D1, Tj=25°C) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 75 75 350 4.5 750 Unit V V V V A A W A A ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) IDC IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage DC current Surge (non-repetitive) forward current I2t for fusing (D...