MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM75E2Y/E3Y-2H
• • • • •
IC Col...
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM75E2Y/E3Y-2H
IC Collector current .......................... 75A VCEX Collector-emitter
voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION DC chopper, DC motor controllers, Inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108 (7.5) 12 93 46.5
10.5
(E2Y) E1 (7.5) D2
A1 D1
C1
φ6.5
23
23
5 B1 E1
8
15
8 M5
Tab#110, t=0.5
6.5
10.5
E1 B1
13
34
(E3Y)
D2 D1
37
30
23
LABEL
C1
E1
K1
E1
B1
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Parameter Collector-emitter
voltage Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current)
(Transistor part including D1, Tj=25°C)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 75 75 500 4 750 Unit V V V V A A W A A
ABSOLUTE MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) IDC IFSM I2t Parameter Repetitive peak reverse
voltage Non-repetitive peak reverse
voltage DC reverse
voltage DC current Surge (non-repetitive) for...