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QM75DY-HB

Mitsubishi Electric Semiconductor

Transistor

MITSUBISHI TRANSISTOR MODULES QM75DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-HB • • • • • IC Collector cur...


Mitsubishi Electric Semiconductor

QM75DY-HB

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Description
MITSUBISHI TRANSISTOR MODULES QM75DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-HB IC Collector current .......................... 75A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 80 20 20 20 E2 B2 4 3–M5 B2 E2 18 34 13 B1 E1 C1 4 C2E 1 2–φ6.5 20 4 E2 C1 7 16 4 20 Tab#110, t=0.5 6.5 C2E1 E2 E1 B1 31 LABEL (8) 22.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 75 75 350 4.5 750 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm ...




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