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QM600HD-M

Mitsubishi Electric Semiconductor

Transistor

MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM600HD-M • • • • IC Collector c...


Mitsubishi Electric Semiconductor

QM600HD-M

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Description
MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM600HD-M IC Collector current ........................ 600A VCEX Collector-emitter voltage ........... 350V hFE DC current gain............................. 500 Non-Insulated Type APPLICATION Robotics, Forklifts, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 80 φ5.5 C B 20 E E 48 22 62 8 B 14 BX 12 17 E E BX 22 25 M4 64 M6 8 5.5 21 LABEL 25 27 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 350 350 400 10 600 — 2080 15 — –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 — 1.96~2.94 20~30 1.47~1.96 15~20 0.98~1.47 10~15 0.98~1.47 10~15 420 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm N·m kg·cm N·m kg·cm g Mounting screw M5 — Mounting torque B(E) terminal screw M4 BX terminal screw M4 — Weight Ty...




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