QM50TF-HB

MITSUBISHI TRANSISTOR MODULES QM50TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TF-HB IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 102±0.5 6 14 6 14 6 17 7–M4 4–φ5.5 BuP BvP EvP BvN EvN U V BwP EwP BwN EwN N N W P BuP EuP BvP EvP BwPEwP P 30 16.5 P EuP BuN EuN 74±0.25 30 24.5 8.5 17 2 22 20 20 80±0.25 22 11 Tab#110, t=0.5 8.1 30+1.5 –0.5 29.5 LABEL 7 27 N 10 43 U V W N 12 91±0.5 P BuN EuN BvN EvN BwN EwN Note: All Transistor Units are 3-Stage Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 6...