QM3009K
P-Ch 30V Fast Switching MOSFETs
General Description
The QM3009K is the highest performance trench P-ch MOSFETs ...
QM3009K
P-Ch 30V Fast Switching
MOSFETs
General Description
The QM3009K is the highest performance trench P-ch
MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The QM3009K meet the RoHS and Green Product requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS -30V
RDSON 135mΩ
ID -2.3A
Applications
z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System z Load Switch
SOT23 Pin Configuration
D
GS
Absolute Maximum Ratings
Symbol
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating
10s Steady State -30 ±20
-2.6 -2.3 -2.1 -1.8
-4.6 1.32 1 0.84 0.64
-55 to 150 -55 to 150
Units
V V A A A W W ℃ ℃
Thermal Data
Symbol RθJA RθJA RθJC
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t ≤10s)
Thermal Resistance Junction-Case1
1
Typ. -------
Max. 125 95 80
Unit ℃/W ℃/W ℃/W
Rev A.01 D021511
QM3009K
P-Ch 30V Fast Switching M...